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    DLA10IM800UC V = VR 800 A2s A2s A2s A2s Symbol Definition Ratings typ. max. IR V IFAV A VF 1.22 RthJC 2K/W min. 10 VRSM V 5 T = 25°CVJ T = °CVJ 150 mA 0.05 V = VR 800 T = 25°CVJ I = AF 10 V T = °CC 145 Ptot 75 W T = 25°CC RthCH K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.40 T = 25°CVJ VF0 V 0.84 T = °CVJ 175 rF 30 m? V 1.16 T = °CVJ 150 I = AF 10 V 1.45 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only μA VRRM V 800 max. repetitive reverse blocking voltage T = 25°CVJ CJ 3 junction capacitance V = VR 400 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°CVJ max. forward surge current T = °CVJ 150 I2t T = 45°CVJ value for fusing T = °CVJ 150 V = 0 VR V = 0 VR V = 0 VR V = 0 VR t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine T = °CVJ 175 120 130 50 50 A A A A 100 110 72 70 rectangular 0.5d = average forward current thermal resistance junction to case thermal resistance case to heatsink Rectifier 900 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20130121b Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |